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savantic semiconductor product specification silicon pnp power transistors 2SB859 d escription with to-220c package complement to type 2sd1135 applications low frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cp collector current-peak -8 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -45~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB859 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = 8 -80 v v (br)ebo emitter-base breakdown votage i e =-10a; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2 a;i b =-0.2 a -2.0 v v be base-emitter voltage i c =-1a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-0.1a ; v ce =-5v 35 cob collector output capacitance i c =0; v cb =-20v;f=1mhz 75 pf f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz h fe-1 classifications b c 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB859 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SB859

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